Laser assisted growth of silicon nano-structures

dc.contributor	Graduate Program in Physics.
dc.contributor.advisor	İnci, Naci.
dc.contributor.author	Demirbaş, Elif.
dc.date.accessioned	2023-03-16T10:38:09Z
dc.date.available	2023-03-16T10:38:09Z
dc.date.issued	2010.
dc.identifier.other	PHYS 2010 D46
dc.identifier.uri	http://digitalarchive.boun.edu.tr/handle/123456789/13712
dc.description.abstract	In this study, the aim is to produce homogeneous porous silicon(PS) nanostructures and then to observe the effect of resistivity of starting silicon samples. P-type silicon wafers with di erent resistivity are prepared by different anodization methods. Silicon samples fabricated by the electrochemical dissolution are characterized both optically and structurally. By the highlight of quantum con nement effect, optical characterization method is used to determine whether porous silicon nano-structures occur or not. Porous silicon samples are analysed by the Environmental Scanning Electron Microscopy(ESEM).
dc.format.extent	30cm.
dc.publisher	Thesis (M.S.)-Bogazici University. Institute for Graduate Studies in Science and Engineering, 2010.
dc.subject.lcsh	Porous silicon.
dc.title	Laser assisted growth of silicon nano-structures
dc.format.pages	ix, 22 leaves;